PJW2P10A_R2_00001
RoHS

PJW2P10A_R2_00001

Part NoPJW2P10A_R2_00001
Description100V P-CHANNEL ENHANCEMENT MODE
Datasheet Download Now!
ECAD Module PJW2P10A_R2_00001
Get Quotation Now!
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series-
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs650mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds448 pF @ 15 V
FET Feature-
Power Dissipation (Max)3.1W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Grade-
Qualification-
Mounting TypeSurface Mount
Supplier Device PackageSOT-223
Package / CaseTO-261-4, TO-261AA
In Stock: 2541
Pricing
QTY UNIT PRICE EXT PRICE
1 0.41
10 0.402
100 0.39
1000 0.38
10000 0.36
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product
SI4914DY-T1-E3
SI4914DY-T1-E3
Vishay
MOSFET 2N-CH 30V 5.5A 8-SOIC
ZXMP7A17GTA
ZXMP7A17GTA
Diodes Inc.
MOSFET P-CH 70V 2.6A SOT223
SIR186LDP-T1-RE3
SIR186LDP-T1-RE3
Vishay Siliconix
N-CHANNEL 60-V (D-S) MOSFET POWE
SQJ910AEP-T2_GE3
SQJ910AEP-T2_GE3
Vishay Siliconix
MOSFET 2N-CH 30V 30A PPAK SO8
ISL9N315AD3
ISL9N315AD3
onsemi
N-CHANNEL POWER MOSFET
IXFN48N55
IXFN48N55
IXYS
MOSFET N-CH 550V 48A SOT-227B
IRLP3034PBF
IRLP3034PBF
Infineon
MOSFET N-CH 40V 195A TO247AC
AUIRFR540ZTRL
AUIRFR540ZTRL
Infineon
MOSFET N-CH 100V 35A DPAK