RM12N650T2
Part NoRM12N650T2
ManufacturerRectron
DescriptionMOSFET N-CH 650V 11.5A TO220-3
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C11.5A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)360mOhm @ 7A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs-
Vgs(th)(Max)@Id±30V
Vgs(Max)870 pF @ 50 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature101W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220-3
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3445
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.4645 | |
| 10 | 1.4352 | |
| 100 | 1.3913 | |
| 1000 | 1.3473 | |
| 10000 | 1.2888 |
Associated Product
