H5N3011P80-E#T2
RoHS

H5N3011P80-E#T2

Part NoH5N3011P80-E#T2
ManufacturerRenesas
DescriptionN-CHANNEL POWER MOSFET
Datasheet Download Now!
ECAD Module H5N3011P80-E#T2
Get Quotation Now!
Specification
PackageBulk
Series*
ProductStatusActive
FETType-
Technology-
DraintoSourceVoltage(Vdss)-
Current-ContinuousDrain(Id)@25°C-
DriveVoltage(MaxRdsOn-
MinRdsOn)-
RdsOn(Max)@Id-
Vgs-
Vgs(th)(Max)@Id-
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds-
FETFeature-
PowerDissipation(Max)-
OperatingTemperature-
MountingType-
SupplierDevicePackage-
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 3526
Pricing
QTY UNIT PRICE EXT PRICE
1 10.936
10 10.7173
100 10.3892
1000 10.0611
10000 9.6237
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product
TPCC8008(TE12L,QM)
TPCC8008(TE12L,QM)
TOSHIBA
MOSFET N-CH 30V 25A 8TSON
IXTP2N60P
IXTP2N60P
IXYS
MOSFET N-CH 600V 2A TO220AB
BSS119NH6327XTSA1
BSS119NH6327XTSA1
Infineon
MOSFET N-CH 100V 190MA SOT23-3
FQH8N100C
FQH8N100C
onsemi
MOSFET N-CH 1000V 8A TO247-3
DMG7430LFGQ-13
DMG7430LFGQ-13
Diodes Inc.
MOSFET N-CH 30V 10.5A PWRDI3333
UF4C120070B7S
UF4C120070B7S
Qorvo
1200V/70MO,SICFET,G4,TO263-7