RJK1001DPN-E0#T2
Part NoRJK1001DPN-E0#T2
ManufacturerRenesas Electronics Corporation
DescriptionMOSFET N-CH 100V 80A TO220AB
Datasheet
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ECAD Module
Specification
PackageTube
Series-
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C80A (Ta)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs5.5mOhm @ 40A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs147 nC @ 10 V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds10000 pF @ 10 V
FET Feature-
Power Dissipation (Max)200W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3
Grade-
Qualification-
In Stock:
3363
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 3.85 | |
| 10 | 3.773 | |
| 100 | 3.66 | |
| 1000 | 3.54 | |
| 10000 | 3.39 |
Associated Product
