BSM400C12P3G202
Part NoBSM400C12P3G202
ManufacturerROHM
DescriptionSICFET N-CH 1200V 400A MODULE
Datasheet
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Specification
PackageTray
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C400A (Tc)
DriveVoltage(MaxRdsOn-
MinRdsOn)-
RdsOn(Max)@Id5.6V @ 106.8mA
Vgs-
Vgs(th)(Max)@Id+22V, -4V
Vgs(Max)17000 pF @ 10 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1570W (Tc)
PowerDissipation(Max)175°C (TJ)
OperatingTemperatureChassis Mount
MountingTypeModule
SupplierDevicePackageModule
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3215
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 1134.9268 | |
10 | 1112.2283 | |
100 | 1078.1805 | |
1000 | 1044.1327 | |
10000 | 998.7356 |