BSM600D12P4G103
Part NoBSM600D12P4G103
ManufacturerRohm Semiconductor
DescriptionSIC 2N-CH 1200V 567A MODULE
Datasheet
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ECAD Module
Specification
PackageBox
Series-
ProductStatusActive
TechnologySilicon Carbide (SiC)
Configuration2 N-Channel
FETFeatureStandard
DraintoSourceVoltage(Vdss)1200V (1.2kV)
Current-ContinuousDrain(Id)@25°C567A (Tc)
RdsOn(Max)@Id-
Vgs4.8V @ 291.2mA
Vgs(th)(Max)@Id-
GateCharge(Qg)(Max)@Vgs59000pF @ 10V
InputCapacitance(Ciss)(Max)@Vds1.78kW (Tc)
Power-Max175°C (TJ)
OperatingTemperatureChassis Mount
MountingTypeModule
Package/CaseModule
SupplierDevicePackage-
Grade-
Qualification
In Stock:
3053
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1214.5042 | |
| 10 | 1190.2141 | |
| 100 | 1153.779 | |
| 1000 | 1117.3439 | |
| 10000 | 1068.7637 |
Associated Product
