RQ3E100BNTB1
Part NoRQ3E100BNTB1
ManufacturerROHM
DescriptionNCH 30V 21A POWER MOSFET: RQ3E10
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C10A (Ta), 21A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)10.4mOhm @ 10A, 10V
RdsOn(Max)@Id2.5V @ 1mA
Vgs22 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1100 pF @ 15 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature2W (Ta), 15W (Tc)
PowerDissipation(Max)150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageSurface Mount
Package/Case8-HSMT (3.2x3)
GateCharge(Qg)(Max)@Vgs8-PowerVDFN
Grade
Qualification
In Stock:
4003
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.8446 | |
| 10 | 0.8277 | |
| 100 | 0.8024 | |
| 1000 | 0.777 | |
| 10000 | 0.7432 |
Associated Product
