SCT3017ALGC11
Part NoSCT3017ALGC11
ManufacturerROHM
Description650V, 118A, THD, TRENCH-STRUCTUR
Datasheet
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Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C118A (Tc)
DriveVoltage(MaxRdsOn18V
MinRdsOn)22.1mOhm @ 47A, 18V
RdsOn(Max)@Id5.6V @ 23.5mA
Vgs172 nC @ 18 V
Vgs(th)(Max)@Id2884 pF @ 500 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds427W
FETFeature175°C (TJ)
PowerDissipation(Max)-
OperatingTemperature-
MountingTypeThrough Hole
SupplierDevicePackageTO-247N
Package/CaseTO-247-3
GateCharge(Qg)(Max)@Vgs+22V, -4V
Grade
Qualification
In Stock:
6514
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 114.6378 | |
10 | 112.345 | |
100 | 108.9059 | |
1000 | 105.4668 | |
10000 | 100.8813 |