SCT3160KLHRC11
RoHS

SCT3160KLHRC11

Part NoSCT3160KLHRC11
ManufacturerROHM
DescriptionSICFET N-CH 1200V 17A TO247N
Datasheet Download Now!
ECAD Module SCT3160KLHRC11
Get Quotation Now!
Specification
PackageTube
Series-
ProductStatusNot For New Designs
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C17A (Tc)
DriveVoltage(MaxRdsOn18V
MinRdsOn)208mOhm @ 5A, 18V
RdsOn(Max)@Id5.6V @ 2.5mA
Vgs42 nC @ 18 V
Vgs(th)(Max)@Id+22V, -4V
Vgs(Max)398 pF @ 800 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature103W
PowerDissipation(Max)175°C (TJ)
OperatingTemperatureAutomotive
MountingTypeAEC-Q101
SupplierDevicePackageThrough Hole
Package/CaseTO-247N
GateCharge(Qg)(Max)@VgsTO-247-3
Grade
Qualification
In Stock: 5661
Pricing
QTY UNIT PRICE EXT PRICE
1 15.048
10 14.747
100 14.2956
1000 13.8442
10000 13.2422
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product
IXTQ44P15T
IXTQ44P15T
IXYS
MOSFET P-CH 150V 44A TO3P
NTMFS5C404NLT3G
NTMFS5C404NLT3G
onsemi
MOSFET N-CH 40V 52A/370A 5DFN
IRFP7530PBF
IRFP7530PBF
Infineon
MOSFET N-CH 60V 195A TO247
G60N10T
G60N10T
Goford Semiconductor
N100V,RD(MAX)<25M@10V,RD(MAX)<30
TSM60NB190CF
TSM60NB190CF
Taiwan Semiconductor
600V, 18A, SINGLE N-CHANNEL POWE
FCP4N60
FCP4N60
onsemi
MOSFET N-CH 600V 3.9A TO220-3