SCT027W65G3-4AG
Part NoSCT027W65G3-4AG
ManufacturerSTMicroelectronics
DescriptionTO247-4
Datasheet
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ECAD Module
Specification
PackageTube
Series-
Product StatusActive
FET TypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V, 18V
Rds On (Max) @ Id, Vgs39.3mOhm @ 30A, 18V
Vgs(th) (Max) @ Id4.2V @ 5mA
Gate Charge (Qg) (Max) @ Vgs51 nC @ 18 V
Vgs (Max)+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds1229 pF @ 400 V
FET Feature-
Power Dissipation (Max)313W (Tc)
Operating Temperature-55°C ~ 200°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-4
Package / CaseTO-247-4
GradeAutomotive
QualificationAEC-Q101
In Stock:
2379
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 12.448 | |
| 10 | 12.199 | |
| 100 | 11.83 | |
| 1000 | 11.45 | |
| 10000 | 10.95 |
Associated Product
