SCT10N120H
Part NoSCT10N120H
ManufacturerSTMicroelectronics
DescriptionSICFET N-CH 1200V 12A H2PAK-2
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR)
Series-
ProductStatusObsolete
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C12A (Tc)
DriveVoltage(MaxRdsOn20V
MinRdsOn)690mOhm @ 6A, 20V
RdsOn(Max)@Id3.5V @ 250µA
Vgs+25V, -10V
Vgs(th)(Max)@Id-
Vgs(Max)150W (Tc)
InputCapacitance(Ciss)(Max)@Vds-55°C ~ 200°C (TJ)
FETFeatureSurface Mount
PowerDissipation(Max)H2Pak-2
OperatingTemperatureTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
MountingType22 nC @ 20 V
SupplierDevicePackage290 pF @ 400 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
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4985
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Associated Product
