SCTH40N120G2V-7
Part NoSCTH40N120G2V-7
ManufacturerSTMicroelectronics
DescriptionSILICON CARBIDE POWER MOSFET 120
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C36A (Tc)
DriveVoltage(MaxRdsOn18V
MinRdsOn)100mOhm @ 20A, 18V
RdsOn(Max)@Id4.9V @ 1mA
Vgs61 nC @ 18 V
Vgs(th)(Max)@Id+22V, -10V
Vgs(Max)1233 pF @ 800 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature238W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeH2PAK-7
SupplierDevicePackage-
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4191
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 16.965 | |
| 10 | 16.6257 | |
| 100 | 16.1167 | |
| 1000 | 15.6078 | |
| 10000 | 14.9292 |
Associated Product
