FLD470
RoHS

FLD470

Part NoFLD470
DescriptionMOSFET 40V/70A/0.005
Datasheet Download Now!
ECAD Module FLD470
Get Quotation Now!
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)40 V
Current-ContinuousDrain(Id)@25°C70A (Ta)
DriveVoltage(MaxRdsOn10V
MinRdsOn)10.5mOhm @ 10A, 10V
RdsOn(Max)@Id4V @ 1mA
Vgs-
Vgs(th)(Max)@Id±20V
Vgs(Max)5100 pF @ 10 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature35W (Tc)
PowerDissipation(Max)150°C
OperatingTemperatureThrough Hole
MountingTypeTO-220
SupplierDevicePackageTO-220-3 Full Pack
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 4932
Pricing
QTY UNIT PRICE EXT PRICE
1 1.479
10 1.4494
100 1.4051
1000 1.3607
10000 1.3015
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product
BLF183XRSU
BLF183XRSU
Ampleon
RF MOSFET LDMOS 50V LDMOST
TSM500N15CS
TSM500N15CS
Taiwan Semiconductor
150V, 11A, SINGLE N-CHANNEL POWE
FDN304P-NL-ML
FDN304P-NL-ML
MOSLEADER
P-Channel -20V -2.4A SOT-23-3
NTR0202PLT1G
NTR0202PLT1G
onsemi
MOSFET P-CH 20V 400MA SOT23-3
FDPF7N60NZT
FDPF7N60NZT
onsemi
MOSFET N-CH 600V 6.5A TO220F
PTFA091503ELV4R0XTMA1
PTFA091503ELV4R0XTMA1
Infineon
RF MOSFET LDMOS 30V H-33288-6
IMT65R039M1HXTMA1
IMT65R039M1HXTMA1
Infineon
SILICON CARBIDE MOSFET PG-HSOF-8
IXFN48N50U3
IXFN48N50U3
IXYS
MOSFET N-CH 500V 48A SOT-227B