S2M0016120D-1
Part NoS2M0016120D-1
ManufacturerSMC Diode Solutions
DescriptionMOSFET SILICON CARBIDE SIC 1200V
Datasheet
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ECAD Module
Specification
PackageTube
Series-
Product StatusActive
FET TypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C140A (Tc)
Drive Voltage (Max Rds On, Min Rds On)18V, 20V
Rds On (Max) @ Id, Vgs23mOhm @ 75A, 20V
Vgs(th) (Max) @ Id3.6V @ 23mA
Gate Charge (Qg) (Max) @ Vgs285 nC @ 20 V
Vgs (Max)+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds4540 pF @ 1000 V
FET Feature-
Power Dissipation (Max)517W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Grade-
Qualification-
Mounting TypeThrough Hole
Supplier Device PackageTO-247AD
Package / CaseTO-247-3
In Stock:
2767
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 24.13 | |
| 10 | 23.647 | |
| 100 | 22.92 | |
| 1000 | 22.2 | |
| 10000 | 21.23 |
Associated Product
