TK5A80E,S4X
Part NoTK5A80E,S4X
ManufacturerTOSHIBA
DescriptionPB-F POWER MOSFET TRANSISTOR TO-
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)800 V
Current-ContinuousDrain(Id)@25°C5A (Ta)
DriveVoltage(MaxRdsOn10V
MinRdsOn)2.4Ohm @ 2.5A, 10V
RdsOn(Max)@Id4V @ 500µA
Vgs20 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)950 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature40W (Tc)
PowerDissipation(Max)150°C
OperatingTemperatureThrough Hole
MountingTypeTO-220SIS
SupplierDevicePackageTO-220-3 Full Pack
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4214
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.3524 | |
| 10 | 1.3254 | |
| 100 | 1.2848 | |
| 1000 | 1.2442 | |
| 10000 | 1.1901 |
Associated Product
