TSM10N80CI C0G
Part NoTSM10N80CI C0G
ManufacturerTaiwan Semiconductor
DescriptionMOSFET N-CH 800V 9.5A ITO220AB
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)800 V
Current-ContinuousDrain(Id)@25°C9.5A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)1.05Ohm @ 4.75A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs53 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)2336 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature48W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeITO-220AB
SupplierDevicePackageTO-220-3 Full Pack, Isolated Tab
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3502
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Associated Product
