TSM60NB099PW C1G
Part NoTSM60NB099PW C1G
ManufacturerTaiwan Semiconductor
DescriptionMOSFET N-CHANNEL 600V 38A TO247
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusNot For New Designs
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C38A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)99mOhm @ 11.7A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs62 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds329W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Through Hole
OperatingTemperatureTO-247
MountingTypeTO-247-3
SupplierDevicePackage2587 pF @ 100 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
17906
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 8.8722 | |
| 10 | 8.6948 | |
| 100 | 8.4286 | |
| 1000 | 8.1624 | |
| 10000 | 7.8075 |
Associated Product
