TSM80N1R2CL C0G
Part NoTSM80N1R2CL C0G
ManufacturerTaiwan Semiconductor
DescriptionMOSFET N-CH 800V 5.5A TO262S
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusNot For New Designs
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)800 V
Current-ContinuousDrain(Id)@25°C5.5A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)1.2Ohm @ 1.8A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs19.4 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)685 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature110W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-262S (I2PAK)
SupplierDevicePackageTO-262-3 Short Leads, I2PAK
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
5800
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.804 | |
| 10 | 1.7679 | |
| 100 | 1.7138 | |
| 1000 | 1.6597 | |
| 10000 | 1.5875 |
Associated Product
