CSD16411Q3T
Part NoCSD16411Q3T
ManufacturerTexas Instruments
DescriptionPROTOTYPE
Datasheet
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Specification
PackageBulk
SeriesNexFET™
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)25 V
Current-ContinuousDrain(Id)@25°C50A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)10mOhm @ 10A, 10V
RdsOn(Max)@Id2.3V @ 250µA
Vgs3.8 nC @ 4.5 V
Vgs(th)(Max)@Id+16V, -12V
Vgs(Max)570 pF @ 12.5 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature35W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType8-VSON-CLIP (3.3x3.3)
SupplierDevicePackage8-PowerTDFN
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
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