CSD25211W1015
Part NoCSD25211W1015
ManufacturerTexas Instruments
DescriptionMOSFET P-CH 20V 3.2A 6DSBGA
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesNexFET™
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)20 V
Current-ContinuousDrain(Id)@25°C3.2A (Ta)
DriveVoltage(MaxRdsOn2.5V, 4.5V
MinRdsOn)33mOhm @ 1.5A, 4.5V
RdsOn(Max)@Id1.1V @ 250µA
Vgs4.1 nC @ 4.5 V
Vgs(th)(Max)@Id-6V
Vgs(Max)570 pF @ 10 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1W (Ta)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType6-DSBGA (1x1.5)
SupplierDevicePackage6-UFBGA, DSBGA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
23556
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.7434 | |
| 10 | 0.7285 | |
| 100 | 0.7062 | |
| 1000 | 0.6839 | |
| 10000 | 0.6542 |
Associated Product
