TJ20A10M3(STA4,Q
RoHS

TJ20A10M3(STA4,Q

Part NoTJ20A10M3(STA4,Q
ManufacturerTOSHIBA
DescriptionTJ20A10M3(STA4,Q
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ECAD Module TJ20A10M3(STA4,Q
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Specification
PackageTube
SeriesU-MOSVI
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C20A (Ta)
DriveVoltage(MaxRdsOn10V
MinRdsOn)90mOhm @ 10A, 10V
RdsOn(Max)@Id4V @ 1mA
Vgs120 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)5500 pF @ 10 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature35W (Tc)
PowerDissipation(Max)150°C
OperatingTemperatureThrough Hole
MountingTypeTO-220SIS
SupplierDevicePackageTO-220-3 Full Pack
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 3857
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Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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