TK16J60W,S1VE
Part NoTK16J60W,S1VE
ManufacturerTOSHIBA
DescriptionX35 PB-F POWER MOSFET TRANSISTOR
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C15.8A (Ta)
DriveVoltage(MaxRdsOn190mOhm @ 7.9A, 10V
MinRdsOn)3.7V @ 790µA
RdsOn(Max)@Id38 nC @ 10 V
Vgs±30V
Vgs(th)(Max)@Id1350 pF @ 300 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds130W (Tc)
FETFeature150°C
PowerDissipation(Max)Through Hole
OperatingTemperatureTO-3P(N)
MountingTypeTO-3P-3, SC-65-3
SupplierDevicePackage10V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4193
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 4.3254 | |
| 10 | 4.2389 | |
| 100 | 4.1091 | |
| 1000 | 3.9794 | |
| 10000 | 3.8064 |
Associated Product
