TK17N65W,S1F
Part NoTK17N65W,S1F
ManufacturerTOSHIBA
DescriptionMOSFET N-CH 650V 17.3A TO247
Datasheet
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ECAD Module
Specification
PackageTube
SeriesDTMOSIV
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C17.3A (Ta)
DriveVoltage(MaxRdsOn10V
MinRdsOn)200mOhm @ 8.7A, 10V
RdsOn(Max)@Id3.5V @ 900µA
Vgs45 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)1800 pF @ 300 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature165W (Tc)
PowerDissipation(Max)150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247
SupplierDevicePackageTO-247-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4260
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 4.3778 | |
| 10 | 4.2902 | |
| 100 | 4.1589 | |
| 1000 | 4.0276 | |
| 10000 | 3.8525 |
Associated Product
