TK65E10N1,S1X
Part NoTK65E10N1,S1X
ManufacturerTOSHIBA
DescriptionMOSFET N CH 100V 148A TO220
Datasheet
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ECAD Module
Specification
PackageTube
SeriesU-MOSVIII-H
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C148A (Ta)
DriveVoltage(MaxRdsOn10V
MinRdsOn)4.8mOhm @ 32.5A, 10V
RdsOn(Max)@Id4V @ 1mA
Vgs81 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)5400 pF @ 50 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature192W (Tc)
PowerDissipation(Max)150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220
SupplierDevicePackageTO-220-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3159
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 2.8943 | |
| 10 | 2.8364 | |
| 100 | 2.7496 | |
| 1000 | 2.6628 | |
| 10000 | 2.547 |
Associated Product
