TW045N120C,S1F
Part NoTW045N120C,S1F
ManufacturerTOSHIBA
DescriptionG3 1200V SIC-MOSFET TO-247 45MO
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C40A (Tc)
DriveVoltage(MaxRdsOn18V
MinRdsOn)59mOhm @ 20A, 18V
RdsOn(Max)@Id5V @ 6.7mA
Vgs57 nC @ 18 V
Vgs(th)(Max)@Id+25V, -10V
Vgs(Max)1969 pF @ 800 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature182W (Tc)
PowerDissipation(Max)175°C
OperatingTemperatureThrough Hole
MountingTypeTO-247
SupplierDevicePackageTO-247-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4633
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 20.0728 | |
| 10 | 19.6713 | |
| 100 | 19.0692 | |
| 1000 | 18.467 | |
| 10000 | 17.6641 |
Associated Product
