TW045Z120C,S1F
Part NoTW045Z120C,S1F
ManufacturerTOSHIBA
DescriptionG3 1200V SIC-MOSFET TO-247-4L 4
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C40A (Tc)
DriveVoltage(MaxRdsOn18V
MinRdsOn)62mOhm @ 20A, 18V
RdsOn(Max)@Id5V @ 6.7mA
Vgs57 nC @ 18 V
Vgs(th)(Max)@Id1969 pF @ 800 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds182W (Tc)
FETFeature175°C
PowerDissipation(Max)-
OperatingTemperature-
MountingTypeThrough Hole
SupplierDevicePackageTO-247-4L(X)
Package/CaseTO-247-4
GateCharge(Qg)(Max)@Vgs+25V, -10V
Grade
Qualification
In Stock:
24062
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 24.721 | |
| 10 | 24.2266 | |
| 100 | 23.4849 | |
| 1000 | 22.7433 | |
| 10000 | 21.7545 |
Associated Product
