TP65H050G4YS
Part NoTP65H050G4YS
ManufacturerTransphorm
Description650 V 35 A GAN FET HIGH VOLTAGE
Datasheet
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ECAD Module
Specification
PackageTube
SeriesSuperGaN®
ProductStatusActive
FETTypeN-Channel
TechnologyGaNFET (Gallium Nitride)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C35A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)60mOhm @ 22A, 10V
RdsOn(Max)@Id4.8V @ 700µA
Vgs24 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1000 pF @ 400 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature132W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247-4L
SupplierDevicePackageTO-247-4
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
20446
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 12.3496 | |
| 10 | 12.1026 | |
| 100 | 11.7321 | |
| 1000 | 11.3616 | |
| 10000 | 10.8676 |
Associated Product
