TP65H300G4LSGB-TR
Part NoTP65H300G4LSGB-TR
ManufacturerTransphorm
DescriptionGANFET N-CH 650V 6.5A QFN8X8
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesSuperGaN®
ProductStatusActive
FETTypeN-Channel
TechnologyGaNFET (Gallium Nitride)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C6.5A (Tc)
DriveVoltage(MaxRdsOn6V
MinRdsOn)312mOhm @ 6.5A, 6V
RdsOn(Max)@Id2.8V @ 500µA
Vgs8.8 nC @ 10 V
Vgs(th)(Max)@Id±12V
Vgs(Max)730 pF @ 400 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature21W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageSurface Mount
Package/Case8-PQFN (8x8)
GateCharge(Qg)(Max)@Vgs8-VDFN Exposed Pad
Grade
Qualification
In Stock:
7935
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 3.4188 | |
| 10 | 3.3504 | |
| 100 | 3.2479 | |
| 1000 | 3.1453 | |
| 10000 | 3.0085 |
Associated Product
