IRC640PBF
Part NoIRC640PBF
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 200V 18A TO220-5
Datasheet
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ECAD Module
Specification
PackageTube
SeriesHEXFET®
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C18A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)180mOhm @ 11A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs70 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1300 pF @ 25 V
InputCapacitance(Ciss)(Max)@VdsCurrent Sensing
FETFeature125W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220-5
SupplierDevicePackageTO-220-5
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
6222
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Associated Product
