SIHG080N60E-GE3
Part NoSIHG080N60E-GE3
ManufacturerVishay Siliconix
DescriptionE SERIES POWER MOSFET TO-247AC
Datasheet
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ECAD Module
Specification
Package1
SeriesTube
ProductStatusE
FETTypeActive
TechnologyN-Channel
DraintoSourceVoltage(Vdss)MOSFET (Metal Oxide)
Current-ContinuousDrain(Id)@25°C600 V
DriveVoltage(MaxRdsOn35A (Tc)
MinRdsOn)10V
RdsOn(Max)@Id80mOhm @ 17A, 10V
Vgs5V @ 250µA
Vgs(th)(Max)@Id63 nC @ 10 V
Vgs(Max)±30V
InputCapacitance(Ciss)(Max)@Vds2557 pF @ 100 V
FETFeature-
PowerDissipation(Max)227W (Tc)
OperatingTemperature-55°C ~ 150°C (TJ)
MountingTypeThrough Hole
SupplierDevicePackageTO-247AC
Package/CaseTO-247-3
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
5380
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 364.14 | |
| 10 | 356.8572 | |
| 100 | 345.933 | |
| 1000 | 335.0088 | |
| 10000 | 320.4432 |
Associated Product
