IRF530L

Part NoIRF530L

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 100V 14A TO262

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Specification

PackageTube

Series-

ProductStatusActive

FETTypeN-Channel

TechnologyMOSFET (Metal Oxide)

DraintoSourceVoltage(Vdss)100 V

Current-ContinuousDrain(Id)@25°C14A (Tc)

DriveVoltage(MaxRdsOn160mOhm @ 8.4A, 10V

MinRdsOn)4V @ 250µA

RdsOn(Max)@Id26 nC @ 10 V

Vgs670 pF @ 25 V

Vgs(th)(Max)@Id-

Vgs(Max)-

InputCapacitance(Ciss)(Max)@Vds-55°C ~ 175°C (TJ)

FETFeatureThrough Hole

PowerDissipation(Max)TO-262

OperatingTemperatureTO-262-3 Long Leads, I2PAK, TO-262AA

MountingType10V

SupplierDevicePackage±20V

Package/Case

GateCharge(Qg)(Max)@Vgs

Grade

Qualification

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