E4M0015075K1
Part NoE4M0015075K1
ManufacturerWolfspeed, Inc.
DescriptionWOLFSPEED SIC, MOSFET
Datasheet
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ECAD Module
Specification
PackageBulk
SeriesE
Product StatusActive
FET TypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)750 V
Current - Continuous Drain (Id) @ 25°C128A (Tc)
Drive Voltage (Max Rds On, Min Rds On)15V
Rds On (Max) @ Id, Vgs21mOhm @ 55.8A, 15V
Vgs(th) (Max) @ Id3.8V @ 15.4mA
Gate Charge (Qg) (Max) @ Vgs191 nC @ 15 V
Vgs (Max)+19V, -8V
Input Capacitance (Ciss) (Max) @ Vds5128 pF @ 500 V
FET Feature-
Power Dissipation (Max)372W (Tc)
Operating Temperature-40°C ~ 175°C (TJ)
GradeAutomotive
QualificationAEC-Q101
Mounting TypeThrough Hole
Supplier Device PackageTO-247-4L
Package / CaseTO-247-4
In Stock:
2006
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 37.59 | |
| 10 | 36.838 | |
| 100 | 35.71 | |
| 1000 | 34.58 | |
| 10000 | 33.08 |
Associated Product
