IRF610SPBF
Part NoIRF610SPBF
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 200V 3.3A D2PAK
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C3.3A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)1.5Ohm @ 2A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs8.2 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)140 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3W (Ta), 36W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-263 (D2PAK)
SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
13453
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.5364 | |
| 10 | 1.5057 | |
| 100 | 1.4596 | |
| 1000 | 1.4135 | |
| 10000 | 1.352 |
Associated Product
