IRFD214PBF
Part NoIRFD214PBF
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 250V 450MA 4DIP
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)250 V
Current-ContinuousDrain(Id)@25°C450mA (Ta)
DriveVoltage(MaxRdsOn10V
MinRdsOn)2Ohm @ 270mA, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs±20V
Vgs(th)(Max)@Id140 pF @ 25 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds1W (Ta)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Through Hole
OperatingTemperature4-HVMDIP
MountingType4-DIP (0.300, 7.62mm)
SupplierDevicePackage8.2 nC @ 10 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
11021
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.4895 | |
| 10 | 0.4797 | |
| 100 | 0.465 | |
| 1000 | 0.4503 | |
| 10000 | 0.4308 |
Associated Product
