IRFD9010PBF
Part NoIRFD9010PBF
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 50V 1.1A 4DIP
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)50 V
Current-ContinuousDrain(Id)@25°C1.1A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)500mOhm @ 580mA, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs11 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)240 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingType4-HVMDIP
SupplierDevicePackage4-DIP (0.300, 7.62mm)
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
8348
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.1704 | |
| 10 | 1.147 | |
| 100 | 1.1119 | |
| 1000 | 1.0768 | |
| 10000 | 1.03 |
Associated Product
