IRFPE30PBF
Part NoIRFPE30PBF
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 800V 4.1A TO247-3
Datasheet
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ECAD Module
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Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)800 V
Current-ContinuousDrain(Id)@25°C4.1A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)3Ohm @ 2.5A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs78 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1300 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature125W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247AC
SupplierDevicePackageTO-247-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
16785
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 5.9385 | |
| 10 | 5.8197 | |
| 100 | 5.6416 | |
| 1000 | 5.4634 | |
| 10000 | 5.2259 |
Associated Product
