IRL510S
Part NoIRL510S
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 100V 5.6A D2PAK
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C5.6A (Tc)
DriveVoltage(MaxRdsOn4V, 5V
MinRdsOn)540mOhm @ 3.4A, 5V
RdsOn(Max)@Id2V @ 250µA
Vgs6.1 nC @ 5 V
Vgs(th)(Max)@Id±10V
Vgs(Max)250 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.7W (Ta), 43W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-263 (D2PAK)
SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
13161
Pricing
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Associated Product
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