SI2302DDS-T1-GE3
Part NoSI2302DDS-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 20V 2.9A SOT23-3
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)20 V
Current-ContinuousDrain(Id)@25°C2.9A (Tj)
DriveVoltage(MaxRdsOn2.5V, 4.5V
MinRdsOn)57mOhm @ 3.6A, 4.5V
RdsOn(Max)@Id850mV @ 250µA
Vgs5.5 nC @ 4.5 V
Vgs(th)(Max)@Id±8V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds-
FETFeature710mW (Ta)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeSOT-23-3 (TO-236)
SupplierDevicePackageTO-236-3, SC-59, SOT-23-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
36190
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.5452 | |
| 10 | 0.5343 | |
| 100 | 0.5179 | |
| 1000 | 0.5016 | |
| 10000 | 0.4798 |
Associated Product
