SI2307CDS-T1-GE3
RoHS

SI2307CDS-T1-GE3

Part NoSI2307CDS-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 30V 3.5A SOT23-3
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ECAD Module SI2307CDS-T1-GE3
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C3.5A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)88mOhm @ 3.5A, 10V
RdsOn(Max)@Id3V @ 250µA
Vgs6.2 nC @ 4.5 V
Vgs(th)(Max)@Id±20V
Vgs(Max)340 pF @ 15 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1.1W (Ta), 1.8W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeSOT-23-3 (TO-236)
SupplierDevicePackageTO-236-3, SC-59, SOT-23-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 25452
Pricing
QTY UNIT PRICE EXT PRICE
1 0.5145
10 0.5042
100 0.4888
1000 0.4733
10000 0.4528
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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