SI2311DS-T1-GE3
Part NoSI2311DS-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 8V 3A SOT23-3
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR)
SeriesTrenchFET®
ProductStatusObsolete
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)8 V
Current-ContinuousDrain(Id)@25°C3A (Ta)
DriveVoltage(MaxRdsOn1.8V, 4.5V
MinRdsOn)45mOhm @ 3.5A, 4.5V
RdsOn(Max)@Id800mV @ 250µA
Vgs12 nC @ 4.5 V
Vgs(th)(Max)@Id±8V
Vgs(Max)970 pF @ 4 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature710mW (Ta)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeSOT-23-3 (TO-236)
SupplierDevicePackageTO-236-3, SC-59, SOT-23-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
11776
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Associated Product
