SI2335DS-T1-GE3
Part NoSI2335DS-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 12V 3.2A SOT23-3
Datasheet
Download Now!
ECAD Module
Specification
PackageTape & Reel (TR)
SeriesTrenchFET®
ProductStatusObsolete
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)12 V
Current-ContinuousDrain(Id)@25°C3.2A (Ta)
DriveVoltage(MaxRdsOn1.8V, 4.5V
MinRdsOn)51mOhm @ 4A, 4.5V
RdsOn(Max)@Id450mV @ 250µA (Min)
Vgs15 nC @ 4.5 V
Vgs(th)(Max)@Id±8V
Vgs(Max)1225 pF @ 6 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature750mW (Ta)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeSOT-23-3 (TO-236)
SupplierDevicePackageTO-236-3, SC-59, SOT-23-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
9779
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | Get latest price! | - |
| 10 | Get latest price! | - |
| 100 | Get latest price! | - |
| 1000 | Get latest price! | - |
| 10000 | Get latest price! | - |
Associated Product
