SI3460DV-T1-GE3
Part NoSI3460DV-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 20V 5.1A 6TSOP
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR)
SeriesTrenchFET®
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)20 V
Current-ContinuousDrain(Id)@25°C5.1A (Ta)
DriveVoltage(MaxRdsOn1.8V, 4.5V
MinRdsOn)27mOhm @ 5.1A, 4.5V
RdsOn(Max)@Id450mV @ 1mA (Min)
Vgs20 nC @ 4.5 V
Vgs(th)(Max)@Id±8V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1.1W (Ta)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType6-TSOP
SupplierDevicePackageSOT-23-6 Thin, TSOT-23-6
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
8909
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Associated Product
