SI4114DY-T1-GE3
Part NoSI4114DY-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 20V 20A 8SO
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)20 V
Current-ContinuousDrain(Id)@25°C20A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)6mOhm @ 10A, 10V
RdsOn(Max)@Id2.1V @ 250µA
Vgs95 nC @ 10 V
Vgs(th)(Max)@Id±16V
Vgs(Max)3700 pF @ 10 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature2.5W (Ta), 5.7W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageSurface Mount
Package/Case8-SOIC
GateCharge(Qg)(Max)@Vgs8-SOIC (0.154, 3.90mm Width)
Grade
Qualification
In Stock:
11983
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.5093 | |
| 10 | 1.4791 | |
| 100 | 1.4338 | |
| 1000 | 1.3886 | |
| 10000 | 1.3282 |
Associated Product
