SI4463BDY-T1-GE3
Part NoSI4463BDY-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 20V 9.8A 8SO
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)20 V
Current-ContinuousDrain(Id)@25°C9.8A (Ta)
DriveVoltage(MaxRdsOn2.5V, 10V
MinRdsOn)11mOhm @ 13.7A, 10V
RdsOn(Max)@Id1.4V @ 250µA
Vgs56 nC @ 4.5 V
Vgs(th)(Max)@Id±12V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1.5W (Ta)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType8-SOIC
SupplierDevicePackage8-SOIC (0.154, 3.90mm Width)
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
14447
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.54 | |
| 10 | 1.5092 | |
| 100 | 1.463 | |
| 1000 | 1.4168 | |
| 10000 | 1.3552 |
Associated Product
