SI5401DC-T1-GE3
Part NoSI5401DC-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 20V 5.2A 1206-8
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR)
SeriesTrenchFET®
ProductStatusObsolete
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)20 V
Current-ContinuousDrain(Id)@25°C5.2A (Ta)
DriveVoltage(MaxRdsOn1.8V, 4.5V
MinRdsOn)32mOhm @ 5.2A, 4.5V
RdsOn(Max)@Id1V @ 250µA
Vgs25 nC @ 4.5 V
Vgs(th)(Max)@Id±8V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds1.3W (Ta)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperature1206-8 ChipFET™
MountingType8-SMD, Flat Lead
SupplierDevicePackage-
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
8814
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Associated Product
