SI5499DC-T1-GE3
RoHS

SI5499DC-T1-GE3

Part NoSI5499DC-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 8V 6A 1206-8 CHIPFET
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ECAD Module SI5499DC-T1-GE3
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusObsolete
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)8 V
Current-ContinuousDrain(Id)@25°C6A (Tc)
DriveVoltage(MaxRdsOn1.5V, 4.5V
MinRdsOn)36mOhm @ 5.1A, 4.5V
RdsOn(Max)@Id800mV @ 250µA
Vgs35 nC @ 8 V
Vgs(th)(Max)@Id±5V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds2.5W (Ta), 6.2W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperature1206-8 ChipFET™
MountingType8-SMD, Flat Lead
SupplierDevicePackage1290 pF @ 4 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 7018
Pricing
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Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product