SI5511DC-T1-E3
Part NoSI5511DC-T1-E3
ManufacturerVishay Siliconix
DescriptionMOSFET N/P-CH 30V 4A/3.6A 1206-8
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusObsolete
TechnologyMOSFET (Metal Oxide)
ConfigurationN and P-Channel
FETFeatureLogic Level Gate
DraintoSourceVoltage(Vdss)30V
Current-ContinuousDrain(Id)@25°C4A, 3.6A
RdsOn(Max)@Id55mOhm @ 4.8A, 4.5V
Vgs2V @ 250µA
Vgs(th)(Max)@Id7.1nC @ 5V
GateCharge(Qg)(Max)@Vgs435pF @ 15V
InputCapacitance(Ciss)(Max)@Vds3.1W, 2.6W
Power-Max-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType8-SMD, Flat Lead
Package/Case1206-8 ChipFET™
SupplierDevicePackage
Grade
Qualification
In Stock:
11576
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Associated Product
