SI6463BDQ-T1-GE3
RoHS

SI6463BDQ-T1-GE3

Part NoSI6463BDQ-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 20V 6.2A 8-TSSOP
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ECAD Module SI6463BDQ-T1-GE3
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Specification
PackageCut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusObsolete
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)20 V
Current-ContinuousDrain(Id)@25°C6.2A (Ta)
DriveVoltage(MaxRdsOn-
MinRdsOn)15mOhm @ 7.4A, 4.5V
RdsOn(Max)@Id800mV @ 250µA
Vgs60 nC @ 5 V
Vgs(th)(Max)@Id-
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds-
FETFeature-
PowerDissipation(Max)-
OperatingTemperatureSurface Mount
MountingType8-TSSOP
SupplierDevicePackage8-TSSOP (0.173, 4.40mm Width)
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 13743
Pricing
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Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product