SI7613DN-T1-GE3
Part NoSI7613DN-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 20V 35A PPAK1212-8
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)20 V
Current-ContinuousDrain(Id)@25°C35A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)8.7mOhm @ 17A, 10V
RdsOn(Max)@Id2.2V @ 250µA
Vgs87 nC @ 10 V
Vgs(th)(Max)@Id±16V
Vgs(Max)2620 pF @ 10 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.8W (Ta), 52.1W (Tc)
PowerDissipation(Max)-50°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® 1212-8
SupplierDevicePackagePowerPAK® 1212-8
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
18021
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.9579 | |
| 10 | 0.9387 | |
| 100 | 0.91 | |
| 1000 | 0.8813 | |
| 10000 | 0.843 |
Associated Product
