SI7682DP-T1-GE3
RoHS

SI7682DP-T1-GE3

Part NoSI7682DP-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 30V 20A PPAK SO-8
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ECAD Module SI7682DP-T1-GE3
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Specification
PackageTape & Reel (TR)
SeriesTrenchFET®
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C20A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)9mOhm @ 20A, 10V
RdsOn(Max)@Id2.5V @ 250µA
Vgs38 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds5W (Ta), 27.5W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperaturePowerPAK® SO-8
MountingTypePowerPAK® SO-8
SupplierDevicePackage1595 pF @ 15 V
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock: 7865
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Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product